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瀏覽器自帶分享功能也很好用哦~IG2型離子源係統典型應用是氬離子濺射清洗表麵(中科院物理所配置多套IG2型離子源)濺射清洗 /表麵準備，用於表麵科學， MBE ，高真空濺射過程，離子輔助沉積，離子束濺射鍍膜，反應離子刻蝕。
IG2 2kV Backfill Ion Source and Control
RBD Instruments’ IG2 Ion Source Package is the ideal solution for sputter cleaning of samples under UHV conditions. The IG2 Ion Source Package consists of the Model 04-165 2 kV Backfill Ion Source and the Model 32-165 Ion Source Control. These units are interchangeable with the PHI® 04-161 and 04-162 ion guns and the PHI® 20-045 control, respectively.
The Model 1401 Ion Gunis ideal for use in surface chemistry experiments such as sample preparation and depth profiling with Auger and XPS. It can be used with most inert gasses.
The Model1407 Ion Gunfeatures Duoplasmatron performance in an electron impact ionization ion gun. By means of changeable apertures in the optics column, a wide range of beam currents and spot sizes may be obtained. At a beam energy of 5 keV, beam current may be adjusted from 2 uA into a 20 um diameter spot to 20 uA into a 100 um diameter spot.
The Model 1402 Ion Gunfeatures high beam currents at very low beam energies. It also may be operated at high beam energies (up to 3 keV) to provide additional depth profiling and sample cleaning capability
3 kV Ion Source Package
RBD is now providing a 3 kV ion source sputter package that comprises an electron discharge source, power supply, and cable. Designed to operate as low as 100 eV, the 3 kV ion source provides a large 10 mm spot size and is compatible with all inert gasses and does not require differential pumping.
The package includes ion source, electronic control unit, sample current meter, cabling, operating manual and a spare filament assembly.
IG2離子源套件包含：
Model 04-165 2 kV背充式離子源
Model 32-165離子源控製器
兼容性優勢
可與PHI® 04-161和04-162型離子源係統互換
控製器可與PHI® 20-045控製器互換使用
Model 1401離子源係統
應用：表麵化學實驗，如樣品製備和俄歇/XPS深度剖析
氣體兼容：適用於大多數惰性氣體
典型用途：氬離子濺射清洗表麵
Model 1407離子源係統
特點：在電子碰撞電離離子源中實現雙等離子體性能
可調參數：
通過更換光學柱中的孔徑，可獲得寬範圍的束流和束斑尺寸
在5 keV束能下，束流可從2 μA（20 μm直徑斑點）調節至20 μA（100 μm直徑斑點）
Model 1402離子源係統
特點：
在極低束能下提供高束流
可在高束能下操作（3 keV）
增強深度剖析和樣品清洗能力
優勢
高性價比：在提供專業性能的同時保持有競爭力的價格
優異兼容性：與主流PHI設備完全互換，便於係統升級和維護
適用性：覆蓋從表麵清洗到深度剖析的多種應用場景
靈活調節：多種型號滿足不同束流、束能和束斑尺寸需求
操作簡便：完整的套件配置，安裝和操作便捷
典型用戶反饋
中科院物理所等科研單位已成功配置多套IG2型離子源，驗證了其在：
樣品表麵清潔處理
薄膜沉積前的表麵活化
深度剖麵分析
材料表麵改性等方麵的優異性能
該離子源係統為表麵科學、材料研究和薄膜技術領域提供了可靠、高效的離子束處理解決方案。
IG2型離子源係統
IG2型離子源係統典型應用是氬離子濺射清洗表麵(中科院物理所配置多套IG2型離子源)濺射清洗 /表麵準備，用於表麵科學， MBE ，高真空濺射過程，離子輔助沉積，離子束濺射鍍膜，反應離子刻蝕。
IG2 2kV Backfill Ion Source and Control
RBD Instruments’ IG2 Ion Source Package is the ideal solution for sputter cleaning of samples under UHV conditions. The IG2 Ion Source Package consists of the Model 04-165 2 kV Backfill Ion Source and the Model 32-165 Ion Source Control. These units are interchangeable with the PHI® 04-161 and 04-162 ion guns and the PHI® 20-045 control, respectively.
The Model 1401 Ion Gunis ideal for use in surface chemistry experiments such as sample preparation and depth profiling with Auger and XPS. It can be used with most inert gasses.
The Model1407 Ion Gunfeatures Duoplasmatron performance in an electron impact ionization ion gun. By means of changeable apertures in the optics column, a wide range of beam currents and spot sizes may be obtained. At a beam energy of 5 keV, beam current may be adjusted from 2 uA into a 20 um diameter spot to 20 uA into a 100 um diameter spot.
The Model 1402 Ion Gunfeatures high beam currents at very low beam energies. It also may be operated at high beam energies (up to 3 keV) to provide additional depth profiling and sample cleaning capability
3 kV Ion Source Package
RBD is now providing a 3 kV ion source sputter package that comprises an electron discharge source, power supply, and cable. Designed to operate as low as 100 eV, the 3 kV ion source provides a large 10 mm spot size and is compatible with all inert gasses and does not require differential pumping.
The package includes ion source, electronic control unit, sample current meter, cabling, operating manual and a spare filament assembly.
IG2離子源套件包含：
Model 04-165 2 kV背充式離子源
Model 32-165離子源控製器
兼容性優勢
可與PHI® 04-161和04-162型離子源係統互換
控製器可與PHI® 20-045控製器互換使用
Model 1401離子源係統
應用：表麵化學實驗，如樣品製備和俄歇/XPS深度剖析
氣體兼容：適用於大多數惰性氣體
典型用途：氬離子濺射清洗表麵
Model 1407離子源係統
特點：在電子碰撞電離離子源中實現雙等離子體性能
可調參數：
通過更換光學柱中的孔徑，可獲得寬範圍的束流和束斑尺寸
在5 keV束能下，束流可從2 μA（20 μm直徑斑點）調節至20 μA（100 μm直徑斑點）
Model 1402離子源係統
特點：
在極低束能下提供高束流
可在高束能下操作（3 keV）
增強深度剖析和樣品清洗能力
優勢
高性價比：在提供專業性能的同時保持有競爭力的價格
優異兼容性：與主流PHI設備完全互換，便於係統升級和維護
適用性：覆蓋從表麵清洗到深度剖析的多種應用場景
靈活調節：多種型號滿足不同束流、束能和束斑尺寸需求
操作簡便：完整的套件配置，安裝和操作便捷
典型用戶反饋
中科院物理所等科研單位已成功配置多套IG2型離子源，驗證了其在：
樣品表麵清潔處理
薄膜沉積前的表麵活化
深度剖麵分析
材料表麵改性等方麵的優異性能
該離子源係統為表麵科學、材料研究和薄膜技術領域提供了可靠、高效的離子束處理解決方案。
滬ICP備2025150052號-1